Development direction of diamond wire silicon wafer cutting equipment

1) High line speed and high production capacity support the reduction of single GW investmentAccording to the theory of fracture mechanics and the properties of silicon materials, when the maximum cutting depth of diamond abrasive grains is greater than the critical cutting depth of silicon materials, the transition from plastic cutting to brittle fracture cutting will occur. Therefore, within the allowable range of the diamond wire load, appropriately increasing the steel wire speed in the multi-wire cutting process is...

2022-06-16DefaultRead more...

Dimensional change of photovoltaic silicon wafers

The size of photovoltaic silicon wafers is derived from semiconductor silicon wafers. In terms of development , photovoltaics lag behind semiconductors by 1 to 2 generations. Over the years, the size of semiconductor silicon wafers has continued to increase, and photovoltaic silicon wafers have also experienced a process from small to large.Driven by the dilution of cost and the improvement of module quality, in the 40 years since 1981, the size of photovoltaic silicon wafers has grown from 100mm...

2022-06-02DefaultRead more...

Processing flow of silicon ingots in semiconductor industry

In the single-crystal silicon wafer preparation stage, the silicon ingots need to be processed into raw silicon wafers or barewa-fers with high surface accuracy and surface quality to prepare for planarization for lithography and other processes in the first half of the IC process. Ultra-smooth and damage-free substrate surface are required here.For silicon wafers with a diameter of ≤200mm, the traditional silicon wafer processing process is:single crystal growth → cropping → outer diameter barrel grinding → flat edge or V-groove...

2022-05-27DefaultRead more...

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2021-02-05DefaultRead more...