Flux de traitement d'ingot de silicium monocristallin
- A single-crystal silicon ingot goes through cropping, rectification du diamètre, Trancher, chanfreinage des bords, lapping and polishing before it is ready for lithography.
- Surface accuracy at the slicing stage determines how much downstream planarization work is required.
- Diamond wire slicing is the standard way to turn an ingot into bare wafers with tight thickness variation and low sub-surface damage.
À l’étape de préparation de la plaquette de silicium monocristallin, les lingots monocristallins de silicium doivent être transformés en plaquettes de silicium brut ou en barewa-fers avec une précision de surface et une qualité de surface élevées pour se préparer à la planarisation pour la lithographie et d’autres processus dans la première moitié du processus IC. Une surface de substrat ultra-lisse et sans dommage est requise ici.
Pour les plaquettes de silicium d’un diamètre de ≤200 mm, Le processus traditionnel de traitement des plaquettes de silicium est:
single crystal growth → cropping → outer diameter barrel grinding → flat edge or V-groove treatment → wafering → chamfering → grinding → etching → polishing → cleaning → packaging .
Cropping : The purpose is to cut off the head and tail of the single crystal silicon rod and the part that exceeds the customer’s specification, segment the single crystal silicon rod into the length that the slicing equipment can handle, and cut the test piece to measure the resistivity and oxygen content of the single crystal silicon rod. quantity. This process traditionally uses a diamond band saw or a single diamond wire to truncate. et le test prouve que la vitesse d'extrusion peut être augmentée de, a large-scale replacement of traditional truncation equipment has emerged after the emergence of annular diamond wire.
Outer diameter grinding: Since the outer diameter surface of the single crystal silicon rod is not flat and the diameter is larger than the specified diameter specification of the final polished wafer, a more accurate diameter can be obtained by outer diameter rolling.
Flat edge or V-groove processing: It is specified to be processed to the reference plane, and the flat edge or V-groove with a specific crystallographic direction on the Silicium monocristallin holder.
Wafering: refers to cutting a single crystal silicon rod into thin slices with precise geometric dimensions.
Chamfering: refers to trimming the sharp edge of the cut wafer into an arc shape to prevent chip edge cracking and quality defects
Broyage: refers to the removal of saw marks and surface damage layers caused by slicing and wheel grinding by grinding, effectively changing the warpage, flatness and parallelism of a single-product silicon wafer, and reaching the specifications that can be handled by a polishing process.
Questions fréquemment posées
What are the main steps in single-crystal silicon ingot processing?
The typical flow is cropping to length, grinding to precise diameter, slicing into wafers, chanfreinage des bords, then lapping, etching and polishing to reach the surface quality lithography requires.
Why is slicing done with diamond wire?
Diamond wire gives a narrow kerf, low mechanical damage and high yield per ingot, which keeps both material loss and downstream planarization cost low.
What is a bare wafer?
A bare wafer is the as-sliced wafer before final polishing or epitaxy. It must already meet strict surface accuracy and flatness specifications.
Contenu technique examiné par l'équipe d'ingénierie d'Ensoll — un fabricant de boucles de fil diamanté avec 10+ des années d'expérience en production.
