单晶硅锭加工流程
- A single-crystal silicon ingot goes through cropping, 直径磨削, 切片, 边缘倒角, 研磨和抛光，之后才能用于光刻.
- 切片阶段的表面精度决定下游平面化工作量.
- 金刚石线切片是将锭材切制成高精度裸片、厚度均匀且亚表面损伤低的标准方法.
在单晶硅晶圆制备阶段, 硅单晶锭需要加工成具有高表面精度和表面质量的原硅片或 BAREWA-FER，以便在 IC 工艺的前半段为光刻和其他工艺的平坦化做准备. 这里需要超光滑和无损坏的基板表面.
用于直径为≤200mm的硅片, 传统的硅片加工工艺是:
单晶生长 → 裁剪 → 外径 桶磨 → 平边或 V 型槽 处理 →晶圆化 →倒角 → 研磨 →蚀刻 →抛光 → 清洁 →包装 .
外径磨削: Since the outer diameter surface of the single crystal 硅棒 is not flat and the diameter is larger than the specified diameter specification of the final polished wafer, 通过外径轧制可以获得更精确的直径.
平边或V型槽加工: 它被指定为要处理到参考平面, and the flat edge or V-groove with a specific crystallographic direction on the 单晶硅 holder.
晶圆化: 指将单晶硅棒切割成具有精确几何尺寸的薄片.
倒角: 指将切割晶圆的锋利边缘修剪成弧形，以防止芯片边缘开裂和质量缺陷
研磨: 是指通过研磨去除切片和砂轮磨削引起的锯痕和表面损伤层, 有效改变翘曲, 单产品硅晶圆的平坦度和平行度, 并达到抛光工艺可以处理的规格.
常见问题
What are the main steps in single-crystal silicon ingot processing?
The typical flow is cropping to length, grinding to precise diameter, slicing into wafers, 边缘倒角, then lapping, etching and polishing to reach the surface quality lithography requires.
Why is slicing done with diamond wire?
Diamond wire gives a narrow kerf, low mechanical damage and high yield per ingot, which keeps both material loss and downstream planarization cost low.
What is a bare wafer?
裸片是指在最终抛光或外延生长之前的切片晶圆. 它必须已经满足严格的表面精度和平整度规范.
技术内容由Ensoll工程团队审核——一家金刚线环制造商 10+ 多年生产经验.
