单晶硅锭加工流程
- A single-crystal silicon ingot goes through cropping, diameter grinding, 切片, edge chamfering, lapping and polishing before it is ready for lithography.
- Surface accuracy at the slicing stage determines how much downstream planarization work is required.
- Diamond wire slicing is the standard way to turn an ingot into bare wafers with tight thickness variation and low sub-surface damage.
在单晶硅晶圆制备阶段, 硅单晶锭需要加工成具有高表面精度和表面质量的原硅片或 BAREWA-FER，以便在 IC 工艺的前半段为光刻和其他工艺的平坦化做准备. 这里需要超光滑和无损坏的基板表面.
用于直径为≤200mm的硅片, 传统的硅片加工工艺是:
单晶生长 → 裁剪 → 外径 桶磨 → 平边或 V 型槽 处理 →晶圆化 →倒角 → 研磨 →蚀刻 →抛光 → 清洁 →包装 .
种植 : 目的是切断单晶硅棒的头尾和超出客户规格的部分, 将单晶硅棒分割成切片设备可以处理的长度, 并切割试件以测量单晶硅棒的电阻率和氧含量. 数量. 该工艺传统上使用金刚石带锯或单根金刚石线截断. 绿轴, 环形金刚石线出现后，出现了对传统截断设备的大规模替代.
外径磨削: Since the outer diameter surface of the single crystal silicon rod is not flat and the diameter is larger than the specified diameter specification of the final polished wafer, 通过外径轧制可以获得更精确的直径.
平边或V型槽加工: 它被指定为要处理到参考平面, and the flat edge or V-groove with a specific crystallographic direction on the 单晶硅 holder.
晶圆化: 指将单晶硅棒切割成具有精确几何尺寸的薄片.
倒角: 指将切割晶圆的锋利边缘修剪成弧形，以防止芯片边缘开裂和质量缺陷
研磨: 是指通过研磨去除切片和砂轮磨削引起的锯痕和表面损伤层, 有效改变翘曲, 单产品硅晶圆的平坦度和平行度, 并达到抛光工艺可以处理的规格.
常见问题
What are the main steps in single-crystal silicon ingot processing?
The typical flow is cropping to length, grinding to precise diameter, slicing into wafers, edge chamfering, then lapping, etching and polishing to reach the surface quality lithography requires.
Why is slicing done with diamond wire?
Diamond wire gives a narrow kerf, low mechanical damage and high yield per ingot, which keeps both material loss and downstream planarization cost low.
What is a bare wafer?
A bare wafer is the as-sliced wafer before final polishing or epitaxy. It must already meet strict surface accuracy and flatness specifications.
技术内容由Ensoll工程团队审核——一家金刚线环制造商 10+ 多年生产经验.
